smd type ic www.kexin.com.cn 1 smd type ic 80v n-channel powertrench mosfet KDS3512 features 4.0a,80v.r ds(on) = 70m @v gs =10v r ds(on) = 80m @v gs =6v low gate charge (13 nc typical) fast switching speed high performance trench technology for extremely low r ds(on) high power and current handling capability absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 80 v gate to source voltage v gs 20 v drain current continuous (note 1a) 4 a drain current pulsed 30 a power dissipation (note 1a) 2.5 power dissipation (note 1b) 1.2 power dissipation (note 1c) 1 operating and storage temperature t j ,t stg -55to175 thermal resistance junction to ambient (note 1a) r ja 50 /w thermal resistance junction to case (note 1) r jc 25 /w i d p d w
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol testconditons min typ max unit single pulse drain-source avalanche energy w dss v dd =40v,i d =4.0a(not2) 90 mj maximum drain-source avalanche current i ar ( not 2) 4.0 a drain-source breakdown voltage b vdss v gs =0v,i d =250 a 80 v breakdown voltage temperature coefficient i d = 250 a, referenced to 25 80 mv/ zero gate voltage drain current i dss v ds =64v,v gs =0v 1 a gate-body leakage, forward i gssf v gs =20v,v ds = 0 v 100 na gate-body leakage, reverse i gssr v gs =-20v,v ds = 0 v -100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 22.44 v gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 -6 mv/ v gs =10v,i d =4.0a 50 70 v gs =6v,i d =3.7a 55 80 v gs =10v,i d =4.0 a,t j = 125 91 135 on-state drain current i d(on) v gs =10v,v ds =5v 20 a forward transconductance g fs v ds =10v,i d =4.0a 14 s input capacitance c iss 634 pf output capacitance c oss 58 pf reverse transfer capacitance c rss 28 pf turn-on delay time t d(on) 714ns turn-on rise time tr 3 6 ns turn-off delay time t d(off) 24 38 ns turn-off fall time t f 48ns total gate charge q g 13 18 nc gate-source charge q gs 2.4 nc gate-drain charge q gd 2.8 nc maximum continuous drain-source diode forward current i s 2.1 a drain-source diode forward voltage v sd v gs =0v,i s = 2.1 a (not 2) 0.8 1.2 v v ds =40v,i d =4.0a,v gs =10v (note 2) m r ds(on) static drain-source on-resistance v dd =40v,i d =1a,v gs =10v,r gen =6 (note 2) v ds =40v,v gs =0v,f=1.0mhz KDS3512
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